SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
نویسندگان
چکیده
منابع مشابه
Hall Factor Calculation for the Characterization of Transport Properties in n-channel 4H-SiC MOSFETs
For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the re...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2020
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.3001211